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  Datasheet File OCR Text:
 SMD Type
High Voltage Transistor FMMT597
SOT-23
+0.1 2.9-0.1 +0.1 0.4-0.1
Transistors
Unit: mm
+0.1 2.4-0.1
1
+0.1 0.95-0.1 +0.1 1.9-0.1
2
0.55
SOT23 PNP silicon planar
+0.1 1.3-0.1
Features
0.4
3
+0.05 0.1-0.01
+0.1 0.97-0.1
1.Base 2.Emitter 3.collector
Absolute Maximum Ratings Ta = 25
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Peak collector current Collector current Base current Power dissipation Operating and storage temperature range Symbol VCBO VCEO VEBO ICM IC IB Ptot Tj,Tstg Rating -300 -300 -5 -1 -0.2 -200 500 -55 to +150 Unit V V V A A mA mW
+0.1 0.38-0.1
0-0.1
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1
SMD Type
FMMT597
Electrical Characteristics Ta = 25
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage * Emitter-base breakdown voltage Collector cutoff current Collector-Emitter Cut-Off Current Emitter cut-off current Collector-emitter saturation voltage * Base-emitter saturation voltage * Base-emitter voltage * Symbol V(BR)CBO IC=-100iA V(BR)CEO IC=-10mA V(BR)EBO IE=-100iA ICBO ICES IEBO VCE(sat) VCB=-250V VCE=-250V VEB=-4V IC=-50mA, IB=-5mA IC=-100mA, IB=-20mA VBE(sat) IC=-100mA, IB=-20mA VBE(ON) IC=-100mA,VCE=-10V IC=-1mA,VCE=-10V Static Forward Current Transfer Ratio hFE IC=-50mA,VCE=-10V * IC=-100mA,VCE=-10V * Current-gain-bandwidth product Output capacitance * Pulse test: tp = 300 is; d 0.02. fT Cobo IC=-50mA,VCE=-10V,f=100MHz VCB=-10V,f=1MHz Testconditons
Transistors
Min -300 -300 -5
Typ
Max
Unit V V V
-100 -100 -100 -0.25 -0.25 -1.0 -0.85 100 100 100 75 10 300
nA nA nA V V V V
MHz pF
Marking
Marking 597
2
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